ON MATERIALS OF HIGH DIELECTRIC CONSTANT

نویسندگان

چکیده

برای دانلود رایگان متن کامل این مقاله و بیش از 32 میلیون مقاله دیگر ابتدا ثبت نام کنید

اگر عضو سایت هستید لطفا وارد حساب کاربری خود شوید

منابع مشابه

On Materials of High Dielectric Constant.

* This work was supported by a grant from the National Science Foundation. 'Yarmolinsky, M. B., and G. L. de la Haba, these PROCEEDINGS, 45, 1721 (1959). 2 Nathans, D., and F. Lipmann, these PROCEEDINGS, 47, 497 (1961). 3Wecker, E., and E. Schonne, these PROCEEDINGS, 47, 278 (1961). 4 Wecker, E., and A. Richter, in Basic Mechanisms in Animal Virus Biology, Cold Spring Harbor Symposia on Quantit...

متن کامل

Tunability of High-dielectric-constant Materials from First Principles

A first-principles method, based on density functional perturbation theory, is presented for computing the leading order tunability of high-dielectric-constant materials.

متن کامل

Effective dielectric constant of random composite materials

The randomness in the structure of two-component dense composite materials influences the scalar effective dielectric constant, in the quasistatic limit. A numerical analysis of this property is developed in this paper. The computer-simulation models used are based on both the finite element method and the boundary integral equation method for twoand three-dimensional structures, respectively. ...

متن کامل

Effective dielectric constant of periodic composite materials

We present computer simulation data for the effective permittivity ~in the quasistatic limit! of a system composed of discrete inhomogeneities of permittivity e1 , embedded in a three-dimensional homogeneous matrix of permittivity e2 . The primary purpose of this paper is to study the related issue of the effect of the geometric shape of the components on the dielectric properties of the medium...

متن کامل

High dielectric constant oxides

The scaling of complementary metal oxide semiconductor (CMOS) transistors has led to the silicon dioxide layer used as a gate dielectric becoming so thin (1.4 nm) that its leakage current is too large. It is necessary to replace the SiO2 with a physically thicker layer of oxides of higher dielectric constant (κ) or ‘high K’ gate oxides such as hafnium oxide and hafnium silicate. Little was know...

متن کامل

ذخیره در منابع من


  با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید

ژورنال

عنوان ژورنال: Proceedings of the National Academy of Sciences

سال: 1963

ISSN: 0027-8424,1091-6490

DOI: 10.1073/pnas.50.3.443